 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Not for new design, this product will be obsoleted soon S822T / S822TW / S822TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 SOT-143 Comments Electrostatic sensitive device. Observe precautions for handling. 3 2 4 1 SOT-343 Features * * * * * * * Low supply voltage Low current consumption e3 50 input impedance at 945 MHz Low noise figure High power gain Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 1 4 2 SOT-343R 4 3 18383 Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Electrostatic sensitive device. Observe precautions for handling. Mechanical Data Typ: S822T Case: SOT-143 Plastic case Weight: approx. 8.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: S822TW Case: SOT-343 Plastic case Weight: approx. 6.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: S822TRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Parts Table Part S822T S822TW S822TRW 82 W22 WS2 Marking SOT-143 SOT-343 SOT-343R Package Document Number 85050 Rev. 1.5, 08-Sep-08 www.vishay.com 1 S822T / S822TW / S822TRW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb 125 C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 - 65 to + 150 Unit V V V mA mW C C Maximum Thermal Resistance Parameter Junction ambient 1) 1) Test condition Symbol RthJA Value 450 Unit K/W on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage Test condition VCE = 12 V, VBE = 0 VCB = 8 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 5 mA, IB = 0.5 mA Symbol ICES ICBO IEBO V(BR)CEO VCEsat hFE 40 6 0.1 90 0.4 150 Min Typ. Max 100 100 1 Unit A nA A V V DC forward current transfer ratio VCE = 3 V, IC = 1 mA www.vishay.com 2 Document Number 85050 Rev. 1.5, 08-Sep-08 S822T / S822TW / S822TRW Vishay Semiconductors Electrical AC Characteristics Tamb = 25 C, unless otherwise specified Parameter Transition frequency Test condition VCE = 3 V, IC = 1 mA, f = 500 MHz VCE = 2 V, IC = 1.5 mA, f = 500 MHz Collector-base capacitance Noise figure VCB = 1 V, f = 1 MHz ZS = ZSopt, f = 450 MHz, VCE = 2 V, IC = 0.5 mA ZS = ZSopt, f = 945 MHz, VCE = 3 V, IC = 1 mA ZS = ZSopt, f = 945 MHz, VCE = 2 V, IC = 1.5 mA Power gain VCE = 2 V, IC = 0.5 mA, f = 450MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz Collector current for fT max Real part of input impedance VCE = 2 V, f = 500 MHz VCE = 3 V, IC = 1 mA, f = 945 MHz VCE = 2 V, IC = 1.5 mA, f = 945 MHz Symbol fT fT Ccb Fopt Fopt Fopt Gpe @Fopt Gpe @Fopt Gpe @Fopt IC Re(h11e) Re(h11e) Min Typ. 4.7 5.2 0.2 1.1 1.8 2 13.5 12.5 14.0 3 50 50 Max Unit GHz GHz pF dB dB dB dB dB dB mA Common Emitter S-Parameters VCE/V IC/mA f/MHz LIN MAG 2 0.5 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 2 1.5 100 0.974 0.967 0.956 0.941 0.926 0.907 0.890 0.870 0.851 0.833 0.814 0.794 0.773 0.919 S11 ANG deg -4.0 -7.9 -11.8 -15.6 -19.0 -22.5 -25.8 -29.3 -32.3 -35.6 -39.0 -42.4 -45.6 -6.9 1.86 1.84 1.82 1.79 1.75 1.72 1.68 1.66 1.63 1.60 1.58 1.57 1.55 4.86 LIN MAG S21 ANG deg 175.2 169.7 164.2 158.9 153.9 149.2 145.0 141.0 136.1 132.6 128.6 124.9 121.2 171.8 0.012 0.024 0.035 0.046 0.056 0.066 0.075 0.084 0.092 0.099 0.108 0.115 0.121 0.012 LIN MAG S12 ANG deg 86.4 82.4 78.6 75.1 71.7 69.0 66.4 63.9 61.1 59.0 56.9 54.8 52.7 84.3 0.997 0.993 0.87 0.979 0.968 0.959 0.951 0.940 0.930 0.924 0.913 0.904 0.895 0.992 LIN MAG S22 ANG deg -2.3 -4.8 -6.9 -9.3 -11.4 -13.1 -15.2 -16.9 -18.8 -20.4 -22.2 -24.0 -25.7 -3.6 Document Number 85050 Rev. 1.5, 08-Sep-08 www.vishay.com 3 S822T / S822TW / S822TRW Vishay Semiconductors VCE/V IC/mA f/MHz LIN MAG 200 300 400 500 600 700 800 900 1000 1100 1200 1300 0.897 0.864 0.824 0.781 0.735 0.693 0.647 0.605 0.567 0.526 0.491 0.458 S11 ANG deg -13.7 -19.8 -25.7 -31.0 -36.1 -40.5 -44.6 -48.5 -52.4 -56.4 -60.1 -64.4 4.78 4.62 4.41 4.21 4.00 3.82 3.62 3.46 3.30 3.16 3.04 2.92 LIN MAG S21 ANG deg 163.4 155.7 148.3 141.3 135.3 129.4 124.3 118.9 114.3 110.0 105.7 102.0 0.023 0.034 0.043 0.051 0.058 0.064 0.071 0.076 0.081 0.085 0.090 0.094 LIN MAG S12 ANG deg 78.4 73.0 68.4 64.0 60.6 58.2 54.7 52.0 49.8 48.1 46.1 44.9 0.979 0.957 0.933 0.909 0.881 0.858 0.836 0.814 0.796 0.778 0.763 0.747 LIN MAG S22 ANG deg -7.1 -10.2 -13.0 -15.6 -17.3 -19.2 -20.7 -22.3 -23.6 -24.9 -26.3 -27.5 Typical Characteristics (Tamb = 25 C unless otherwise specified) 50 40 30 20 10 0 0 13619 Ccb - Collector Base Capacitance ( pF ) Ptot - Total Power Dissipation ( mW ) 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 V CB - Collector Base V oltage ( V ) 25 50 75 100 125 150 13621 Tamb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 3. Collector Base Capacitance vs. Collector Base Voltage 7000 f T - Transition Frequency ( MHz ) f = 500 MHz 6000 5000 4000 3000 2000 1000 0 0 1 2 3 4 3V 2V V CE = 1 V 5 13620 I C - Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current www.vishay.com 4 Document Number 85050 Rev. 1.5, 08-Sep-08 S822T / S822TW / S822TRW Vishay Semiconductors VCE = 8 V, IC = 25 mA, Z0 = 50 S11 j j0.5 120 j2 900 150 j0.2 j5 500 S12 90 60 1300MHz 30 0 0.2 0.5 1 2 5 100 1300 MHz -j0.2 900 -j0.5 13 558 180 100 0.04 0.08 0 500 -j5 -150 -j2 -30 -j -120 13 559 -60 -90 Figure 4. Input Reflection Coefficient Figure 6. Reverse Transmission Coefficient S21 90 120 150 500 900 1300 MHz 30 60 S22 j j0.5 j2 j0.2 j5 100 180 2 4 0 0 0.2 0.5 1 2 5 100 500 -j5 -j0.2 -150 -30 -j0.5 -120 13 560 1300 MHz -j2 -j -60 -90 13 561 Figure 5. Forward Transmission Coefficient Figure 7. Output Reflection Coefficient Document Number 85050 Rev. 1.5, 08-Sep-08 www.vishay.com 5 S822T / S822TW / S822TRW Vishay Semiconductors Package Dimensions in mm 0.1 [0.004] max. 1.1 [0.043] 2.6 [0.102] 2.35 [0.093] 1.8 [0.071] 1.6 [0.063] 0.5 [0.020] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] foot print recommendation: 3 [0.118] 2.8 [0.110] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 0.35 [0.014] 0.15 [0.006] 0.08 [0.003] 1.7 [0.067] 0.9 [0.035] 0.9 [0.035] 0.8 [0.031] 1.2 [0.047] 1.4 [0.055] 1.2 [0.047] 0.9 [0.035] 0.8 [0.031] 2 [0.079] 1.8 [0.071] 0.8 [0.031] 1.9 [0.075] 96 12240 Package Dimensions in mm 0.1 [0.004] max. 0.2 [0.008] 0.1 [0.004] 2.2 [0.087] 1.8 [0.071] 1 [0.039] 0.8 [0.031] 2 [0.079] 1.25 [0.049] 1.05 [0.041] 0.4 [0.016] 0.25 [0.010] 0.7 [0.028] 0.55 [0.022] foot print recommendation: 0.4 [0.016] 0.25 [0.010] 0.4 [0.016] 0.25 [0.010] 0.15 [0.006] min. 2.2 [0.087] 1.15 [0.045] 0.09 [0.035] 0.6 [0.024] 1.35 [0.053] 1.15 [0.045] 1.6 [0.063] 1.4 [0.055] 1.2 [0.047] 96 12237 1.3 [0.051] www.vishay.com 6 0.8 [0.031] 2 [0.079] Document Number 85050 Rev. 1.5, 08-Sep-08 S822T / S822TW / S822TRW Vishay Semiconductors Package Dimensions in mm 96 12238 Document Number 85050 Rev. 1.5, 08-Sep-08 www.vishay.com 7 S822T / S822TW / S822TRW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 Document Number 85050 Rev. 1.5, 08-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
Price & Availability of S822T08
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |